Optoelectronic and birefringence properties of weakly Mg-doped ZnO thin films prepared by spray pyrolysis

MgxZn1−xO thin films were deposited on glass substrate with x varied between 0.01 and 0.05 by spray pyrolysis at a temperature of 450 °C. The structural investigation showed that all had ZnO wurtzite structure preferred (002) orientation. gap energy was calculated using Tauc’s plot, it decreased over the Mg content 0.07 eV. charge carriers’ density dropped an order 105 as increased whereas resistivity mobility increased. SEM observations revealed significant difference undoped doped films. A 632.8 nm laser source prism coupler 2 optical modes for every film in each Transverse Electric Magnetic mode, birefringence Mg-doped positive. Both ordinary extraordinary refractive indices found to decrease Great intention has been paid relation refractive, density, band gap.